Reverse voltage |
1mA
|
Operating
temperature |
-60~-30℃ |
Optical
Power |
1mW
|
Forward
current |
1mA
|
storage
temperature |
-65~+65℃ |
Soldering
temperature(time) |
260℃(10s) |
The opto-electronic characteristics
Parameters |
Sym. |
Test
conditions |
Min |
Max |
Unit |
Response Spectrum |
λ |
— |
950~1650 |
nm |
|
Responsivity |
Re |
λ=1.55μm,VR=VBR-2V,φe=1μw |
8 |
— |
A/W |
Reverse breakdown voltage |
VBR |
ID=10A,Tc=22℃ |
50 |
80 |
V |
Operating
voltage temperature coefficient |
δ |
Tc=-60~+30℃ |
0.1 |
0.15 |
V/℃ |
Dark current |
ID |
VDC=VBR-2V,φe=0,Tc=22℃ |
— |
1 |
nA |
Total
capacitance |
Ctot |
VDC=VBR-2V,1MHz,Tc=22℃ |
— |
0.2 |
pF |
Dark Count Rate |
DCR |
TA=-50℃,fg=100kHz,Tg=7ns, Tedge=2.5ns,SPDE=15% |
— |
3×10-5 |
Counts/gate |
After
Pulse Probability |
PAP |
TA=-50℃,SPDE=15%,fg=100kHz, fP=50kHz
, Tg=7ns , Tedge=2.5ns , λ=1.55μm,Δt=2μs |
|
2 |
% |
PIN# |
Symbol |
Function |
1 |
P |
P (anode) |
2 |
G |
Case
Ground |
3 |
N |
N (cathode) |
● Laser guidance
● Laser positioning
● Laser navigation
● Laser range finder
Ordering Info
Part Number : FOG5522Y
Name: InGaAs eiger-mode APD
Unit Price: USD1350
Lead time: 3-4Weeks
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