QPD-3000I InGaAs Quadrant PIN Detector

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QPD-3000I InGaAs Quadrant PIN Detector

InGaAs Quadrant PIN Detector, high sensitivity photo-diode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. Large photosensitive area is 3mmX4 in diameter. Planar-passivated device structure.

Product Features

● Top illumination planar PD

● Narrow Element gap,

● Low Crosstalk,High reliability

● Good Reponsivity homogeneity of each Quadrant

Technical Specification

OPTICAL AND ELECTRICAL CHARACTERISTICS (T=25°C)

Parameters	Sym	Test conditions	Min	Typ	Max	Unit
Response Spectrum	λ	—	1000~1700			nm
Active diameter	φ	—	3000X4			μm
Element Gap		—	32			μm
Reponsivity	Re	VR=9V,λ=1.55μm,φe=10μW	0.9			A/W
Reponsivity	Re	VR=9V,λ=0.90μm，φe=10μW	0.3			A/W
Max linear power	Φs	VR =9V, RL=50Ω	10			mW
Crosstalk	S_L	VR =9V			2%
Response time	ts	VR=9V， RL=50Ω		1.0	2.0	ns
Dark current	ID	VR=9V			5.0	nA
Reverse breakdown voltage	VBR	IR=10μA	30			V
-3dB bandwidth	BW	VR=9V,λ=1.55μm，RL=50Ω	100			MHZ
Time On	Ton	VR=9V,λ=1.55μm，RL=50Ω			5	ns
Time Off	T_off	VR=9V,λ=1.55μm，RL=50Ω			5	ns
Operating voltage temperature coefficient	δ	Tc=-40～+85℃		0.10	0.15	V/℃
Shunt impedance	Rsh	VR=10mV	75			MΩ
Ununiformity among quadrants	δRe’	VR=9V,λ=1.55μm,φe=10μW			2%
Ununiformity in quadrant	δRe	VR=9V,λ=1.55μm,φe=10μW			2%

ABSOLUTE MAXIMUM RATINGS (T=25°C)

Operating voltage	15V	Operating temperature	-50~+100℃	Power dissipation	100mW
Forward current	10mA	storage temperature	-55~+125℃	Soldering temperature(time)	260℃（10s）

TYPICAL CHARACTERISTICS

DIMENSIONAL OUTLINE

Electric circuit

The package and lead
— This detector need feedback of voltage temperature when operating.
—The suitable ESD protecting mersures are recommend in storage,transporting and using.

Applications

● Laser guidance
● Laser positioning

● Laser navigation

● Laser range finder.

QPD-3000I InGaAs Quadrant PIN Detector test report